BD810 Datasheet
BD810 Datasheet (onsemi)
onsemi
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features • H.
* High DC Current Gain
* These Devices are Pb
*Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector
*Emitter Voltage Collector
*Base Voltage Emitter
*Base Voltage Collector Current Base Current Total Device Dissipation
@ TC = 25°C Derate above 25°C
VCEO VCBO VEBO
IC IB .
BD810 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·DC Current Gain - : hFE =30@ IC= -2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) ·Complement to Type BD809 ·Minimum Lot-to-Lot variations for robust device performance and reliable .
less otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -2V ICBO Collector Cutoff Current VCB= -80V;IE= 0 IEBO Emit.
BD810 Datasheet (Savantic)
Savantic
·With TO-220C package ·Complement to type BD809 ·DC current gain : hFE = 30 (Min) @ IC = 2.0 Adc APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi compleme.
d SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A; IB=0 VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A VBE ICBO IEBO hFE-1 Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain IC=-4A ; VCE=-2V VCB=-80V; IE=0.