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BD810 - PNP Transistor

General Description

DC Current Gain - : hFE =30@ IC= -2A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) Complement to Type BD809 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizi

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isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE =30@ IC= -2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) ·Complement to Type BD809 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.