BD810 - Plastic High Power Silicon Transistors

onsemi

Key Features

High DC Current Gain.
These Devices are Pb.
Free and are RoHS Compliant.

BD810 plastic high power silicon transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	BD810
Manufacturer	onsemi
File Size	89.20 KB
Description	Plastic High Power Silicon Transistors
Datasheet	BD810 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BD810	PNP Transistor	INCHANGE
BD810	Silicon PNP Power Transistors	Savantic
BD8100CS	DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS	Pan Jit International
BD8100CT	THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS	Pan Jit International
BD8100S	DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS	Pan Jit International

Other Datasheets by onsemi

Part Number	Description
BD809	Plastic High Power Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO VCBO VEBO IC IB PD 80 80 5.0 10 6.0 90 0.72 Vdc Vdc Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.