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BD941 Datasheet

The BD941 is a Silicon NPN Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberBD941
ManufacturerInchange Semiconductor
Overview ·DC Current Gain- : hFE= 40(Min)@ IC= 150mA ·Complement to Type BD934/936/938/940/942 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for us. tion to Ambient MAX 4.17 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD933/935/937/939/941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD933 VCEO(SUS) Collector-Emitter .
Part NumberBD941
DescriptionSilicon Epitaxial Power Transistors
ManufacturerNXP Semiconductors
Overview . .
Part NumberBD941
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220C package ·Low collector saturation voltage APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum. t gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=140V; IE=0 VEB=7V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V IC=0.25A ; VCE=10V 40 15 3 MIN 140 7 TYP. www.datasheet4u.com BD941 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE.

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