BD941F Datasheet

The BD941F is a Silicon Epitaxial Power Transistors. Download the datasheet PDF and view key features and specifications below.

Part Number	BD941F
Description	NPN Transistor
Manufacturer	Inchange Semiconductor
Overview	·DC Current Gain- : hFE= 40(Min)@ IC= 150mA ·Complement to Type BD934F/936F/938F/940F/942F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed f. Case 4.17 ℃/W Thermal Resistance,Junction to Ambient 55 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD933F VCEO(.

Part Number	BD941F
Description	SILICON POWER TRANSISTOR
Manufacturer	SavantIC
Overview	·With TO-220F package ·Low collector saturation voltage APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-. off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=140V; IE=0 VEB=7V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V IC=0.25A ; VCE=10V 40 15 3 MIN 140 7 www.datasheet4u.com BD941F SYMBOL V(BR)CEO V.

Similar Datasheets