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BD949 Datasheet

The BD949 is a SILICON POWER TRANSISTOR. Download the datasheet PDF and view key features and specifications below.

Part NumberBD949
ManufacturerSavantIC
Overview ·With TO-220C package ·Low collector saturation voltage ·High current capability APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting. C current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=2A; IB=0.2A IC=2A; IB=0.2A VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=4V IC=2A ; VCE=4V IC=0.5A ; VCE=4V 40 20 3 MIN 60 7 TYP. www.datasheet4u.com BD949 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1.
Part NumberBD949
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 500mA ·Complement to Type BD950 ·Minimum Lot-to-Lot variations for robust device performance and reliab. CTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Volta.
Part NumberBD949
DescriptionNPN PLASTIC POWER TRANSISTOR
ManufacturerContinental Device India
Overview Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 BD949, BD951, BD953, BD95. unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current VCBO VCEO VEBO IC All dimin sions in mm. K 949 950 max. 60 max. 60 max. max. max. max. min. 949 950 max. 60 max. 60 max. .

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