| Part Number | BDW23 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | BDW23/A/B/C BDW23/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW24, BDW24A, BDW24B and BDW24C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN . 23B : BDW23C ICEO Collector Cut-off Current : BDW23 : BDW23A : BDW23B : BDW23C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = 22V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 1A VCE = 3V, IC = 2A VCE = 3V, IC = 6A IC = 2A, IB = 8mA IC = 6A, . |
BDW23 Datasheet and Specifications PDF
The BDW23 is a Hammer Drivers/ Audio Amplifiers.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | BDW23 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Power Innovations Limited |
| Overview | BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDW24, BDW24A, BDW2. emperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC IB Ptot Ptot Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 6 0.2 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION Informat. |
| Part Number | BDW23 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min)@ IC= 2A ·Complement to Type BDW24/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS. ℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDW23 45 V(BR)CEO Collector-Emitter Breakdown Voltage BDW23A BDW23B IC= 50mA ;IB=0 60 80 V BDW23C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 8mA 2 V VCE(sat)-2 Collector-Emitter Saturati. |