BDW94 Datasheet

The BDW94 is a PNP Epitaxial Silicon Transistor.

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Part NumberBDW94
ManufacturerFairchild Semiconductor
Overview BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively January 2. .
Part NumberBDW94
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min)- BDW94C ·Complement to Type BDW93/A/B/C ·Minimum Lot. nce, Junction to Case isc website：www.iscsemi.com MAX 1.5 UNIT ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW94 CONDITIONS VCEO(SUS) Collector-Emitter S.
Part NumberBDW94
DescriptionSilicon PNP Power Transistor
ManufacturerNJS
Overview • Collector Current -lc= -12A • Collector-Emitter Sustaining Voltage- : VCEO(sus) = -45V(Min)- BDW94; -60V(Min)- BDW94A -SOV(Min)- BDW94B; -100V(Min)- BDW94C • Complement to Type BDW93/A/B/C APPLICATI. j-c Thermal Resistance, Junction to Case MAX 1.5 UNIT
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Part NumberBDW94
DescriptionDarlington Transistors
ManufacturerMulticomp
Overview Darlington Transistors BDW93, BDW94 Series Features: Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - B. Designed for general-purpose amplifier and low speed switching applications
* Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C
* Collector-emitter saturation voltage-VCE (sat) = 2 V (Maximum) at IC = 5 A
* Monolithic construction wit.

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