| Part Number | BDX63A Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDX62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION. & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDX63/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX63 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX63A BDX63B IC= 50mA ;IB=0 BDX63C VCE(sat) Collector. |
BDX63A Datasheet and Specifications PDF
The BDX63A is a Silicon NPN Darlington Power Transistor.
| Part Number | BDX63A Datasheet |
|---|---|
| Description | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
| Manufacturer | Seme LAB |
| Overview | BDX63 BDX63A BDX63B BDX63C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transi. b.co.uk Website: V V V A A mA W °C °C 100 5 ï ï 120 5 8 12 í ï ï 140 5 ï ï î 150 90 200 -65 to 200 1.94 °C / W Prelim. 7/93 BDX63 BDX63A BDX63B BDX63C ELECTRICAL CHARACTERISTICS (Tj = 25°C, Parameter ICBO ICEO IEBO hFE VBE VCEsat Cc fhfe E(BR) Collector cut-off curre. |
| Part Number | BDX63A Datasheet |
|---|---|
| Description | NPN SILICON DARLINGTONS |
| Manufacturer | Comset Semiconductors |
| Overview | BDX63 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX63, BDX63A, BDX63 and BDX63C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and swi. e noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) IC=0.1 A IB=0 L=25mH VCE=30 V VCE=40 V VCE=50 V VCE=60 V VBE=5 V BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C Min 60 80 100 120 - Typ - Max 0.5 Unit VCEO(SUS) V ICEO Collec. |
| Part Number | BDX63A Datasheet |
|---|---|
| Description | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
| Manufacturer | TT Electronics |
| Overview | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR BDX63 / BDX63A / BDX63B / BDX63C Hermetic TO3 Metal Package Ideally Suited for General Purpose Switching and Amplifier Applications Screening Options Ava. ess. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: +44 (0) 1455 556565 Fax: +44 . |