| Part Number | BDX66A Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000(Min)@ IC= -10A ·Complement to Type BDX67/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA. i.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX66/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX66 -60 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX66A BDX66B IC= -. |
BDX66A Datasheet and Specifications PDF
The BDX66A is a PNP Transistor.
| Part Number | BDX66A Datasheet |
|---|---|
| Description | PNP SILICON DARLINGTONS POWER TRANSISTOR |
| Manufacturer | Comset Semiconductors |
| Overview | BDX66 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX66, BDX66A, BDX66B and BDX66C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and s. ymbol Ratings Test Condition(s) BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A Min 60 80 100 120 - Typ 2000 Max 3 Unit -VCEO(SUS) Collector-Emitter Breakdown -IC=0.1 A L=25mH Voltage (*) -VCE=30 V -VCE=40 V -VCE=50 V -VCE=60 V -VBE=5 V -VCB=60 V. |
| Part Number | BDX66A Datasheet |
|---|---|
| Description | PNP DARLINGTON SILICON POWER TRANSISTOR |
| Manufacturer | TT Electronics |
| Overview | PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM R. ssumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: s. |