BDX87 Datasheet
BDX87 Datasheet (STMicroelectronics)
STMicroelectronics
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BDX87 Datasheet (Seme LAB)
Seme LAB
BDX87 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package..
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BDX87 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·High DC Current Gain- : hFE= 750(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C ·Complement to Type BDX88/A/B/.
o Case MAX UNIT 1.45 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDX87/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX87 VCEO(SUS) Collector-Emitter Sustaining Volt.