BDX87B Datasheet
BDX87B Datasheet (Seme LAB)
Seme LAB
BDX87B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
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BDX87B Datasheet (STMicroelectronics)
STMicroelectronics
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BDX87B Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·High DC Current Gain- : hFE= 750(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C ·Complement to Type BDX88/A/B/.
o Case MAX UNIT 1.45 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDX87/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX87 VCEO(SUS) Collector-Emitter Sustaining Volt.