| Part Number | BDY25B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust devic. BOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.25A ICBO Collector Cutoff Cu. |
BDY25B Datasheet
The BDY25B is a Silicon NPN Power Transistor.
| Part Number | BDY25B |
|---|---|
| Description | HIGH CURRENT NPN SILICON TRANSISTOR |
| Manufacturer | Seme LAB |
| Overview |
BDY25B
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
1
2
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
HIGH CURRENT NPN SILICON TRANSISTOR
FEATU.
* HIGH CURRENT FAST SWITCHING * HIGH RELIABILITY * SCREENING OPTIONS AVAILABLE 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. Pin 1 = Base 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) APPLICATIONS * SW. |