| Part | BDY25B |
|---|---|
| Description | Silicon NPN Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 207.22 KB |
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| BDY25B | Seme LAB | HIGH CURRENT NPN SILICON TRANSISTOR |
| BDY23 | Comset Semiconductor | NPN SILICON TRANSISTORS |
| BDY24 | Comset Semiconductor | NPN SILICON TRANSISTORS |
| BDY25 | Seme LAB | Bipolar NPN Device |
| BDY25 | Comset Semiconductor | NPN SILICON TRANSISTORS |
