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BDY26C

Manufacturer: Inchange Semiconductor

BDY26C datasheet PDF for Silicon NPN Power Transistor.

BDY26C datasheet preview

BDY26C Datasheet Details

Part number BDY26C
Datasheet BDY26C-InchangeSemiconductor.pdf
File Size 207.06 KB
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
BDY26C page 2

BDY26C Overview

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF signal powe amplifier applications.

BDY26C from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Seme LAB Logo BDY26C HIGH CURRENT NPN SILICON TRANSISTOR Seme LAB
Comset Semiconductor Logo BDY26 NPN SILICON TRANSISTORS Comset Semiconductor
INCHANGE Logo BDY26 NPN Transistor INCHANGE
Seme LAB Logo BDY26A HIGH CURRENT NPN SILICON TRANSISTOR Seme LAB
Seme LAB Logo BDY26B HIGH CURRENT NPN SILICON TRANSISTOR Seme LAB
Inchange Semiconductor logo - Manufacturer

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