| Part number | BDY26C |
|---|---|
| Download | BDY26C Datasheet (PDF) |
| File Size | 207.06 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Seme LAB |
BDY26C | HIGH CURRENT NPN SILICON TRANSISTOR |
Comset Semiconductor |
BDY26 | NPN SILICON TRANSISTORS |
Inchange Semiconductor |
BDY26 | NPN Transistor |
|
Seme LAB |
BDY26A | HIGH CURRENT NPN SILICON TRANSISTOR |
|
Seme LAB |
BDY26B | HIGH CURRENT NPN SILICON TRANSISTOR |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF signal powe amplifier applications.
