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BDY20 - Silicon NPN Power Transistor

General Description

Excellent Safe Operating Area DC Current Gain -hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1V(Max)@ IC = 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and am

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain -hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.