BDY20 - Silicon NPN Power Transistor

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	BDY20
Manufacturer	Inchange Semiconductor
File Size	208.49 KB
Description	Silicon NPN Power Transistor
Datasheet	BDY20 Datasheet
Additional preview pages of the BDY20 datasheet.

Product details

Description

Excellent Safe Operating Area DC Current Gain -hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1V(Max)@ IC = 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V

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Published: Jun 26, 2016 |