| Part number | BDY20 |
|---|---|
| Datasheet | BDY20-InchangeSemiconductor.pdf |
| File Size | 208.49 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
·Excellent Safe Operating Area ·DC Current Gain -hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BDY20 | Bipolar NPN Device | Seme LAB |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BDY23 | Silicon NPN Power Transistor |
| BDY24 | Silicon NPN Power Transistor |
| BDY25B | Silicon NPN Power Transistor |
| BDY26C | Silicon NPN Power Transistor |
| BDY13-6 | Silicon NPN Power Transistor |
| BDY53 | Silicon NPN Power Transistor |
| BDY54 | Silicon NPN Power Transistor |
| BDY55X | Silicon NPN Power Transistor |
| BDY58S | Silicon NPN Power Transistor |
| BDY71 | Silicon NPN Power Transistor |
