| Part number | BDY24 |
|---|---|
| Datasheet | BDY24_InchangeSemiconductor.pdf |
| File Size | 211.55 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF signal powe amplifier applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BDY24 | (BDY23 - BDY25)NPN SILICON TRANSISTORS | Comset Semiconductor |
 |
BDY24B | Bipolar NPN Device | Seme LAB |
|
BDY24C | Bipolar NPN Device | Seme LAB |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BDY20 | Silicon NPN Power Transistor |
| BDY23 | Silicon NPN Power Transistor |
| BDY25B | Silicon NPN Power Transistor |
| BDY26C | Silicon NPN Power Transistor |
| BDY13-6 | Silicon NPN Power Transistor |
| BDY53 | Silicon NPN Power Transistor |
| BDY54 | Silicon NPN Power Transistor |
| BDY55X | Silicon NPN Power Transistor |
| BDY58S | Silicon NPN Power Transistor |
| BDY71 | Silicon NPN Power Transistor |
