Datasheet4U Logo Datasheet4U.com

BDY25B - Silicon NPN Power Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – BDY25B

Datasheet Details

Part number BDY25B
Manufacturer Inchange Semiconductor
File Size 207.22 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BDY25B Datasheet
Additional preview pages of the BDY25B datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF signal powe amplifier applications.

📁 Similar Datasheet

  • BDY25 - Bipolar NPN Device (Seme LAB)
  • BDY25A - HIGH CURRENT NPN SILICON TRANSISTOR (Seme LAB)
  • BDY25C - Bipolar NPN Device (Seme LAB)
  • BDY20 - Bipolar NPN Device (Seme LAB)
  • BDY23 - (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)
  • BDY23A - Bipolar NPN Device (Seme LAB)
  • BDY23B - Bipolar NPN Device (Seme LAB)
  • BDY23C - Bipolar NPN Device (Seme LAB)
Other Datasheets by Inchange Semiconductor
  • BDY24 - Silicon NPN Power Transistor
  • BDY26C - Silicon NPN Power Transistor
  • BDY13-6 - Silicon NPN Power Transistor
  • BDY53 - Silicon NPN Power Transistor
  • BDY54 - Silicon NPN Power Transistor
  • BDY55X - Silicon NPN Power Transistor
Published: |