| Part number | BDY25B |
|---|---|
| Datasheet | BDY25B-InchangeSemiconductor.pdf |
| File Size | 207.22 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF signal powe amplifier applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BDY25B | HIGH CURRENT NPN SILICON TRANSISTOR | Seme LAB |
|
BDY25 | Bipolar NPN Device | Seme LAB |
 |
BDY25 | (BDY23 - BDY25)NPN SILICON TRANSISTORS | Comset Semiconductor |
 |
BDY25 | NPN Transistor | INCHANGE |
|
BDY25A | HIGH CURRENT NPN SILICON TRANSISTOR | Seme LAB |
See all Inchange Semiconductor datasheets
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|---|---|
| BDY20 | Silicon NPN Power Transistor |
| BDY23 | Silicon NPN Power Transistor |
| BDY24 | Silicon NPN Power Transistor |
| BDY26C | Silicon NPN Power Transistor |
| BDY13-6 | Silicon NPN Power Transistor |
| BDY53 | Silicon NPN Power Transistor |
| BDY54 | Silicon NPN Power Transistor |
| BDY55X | Silicon NPN Power Transistor |
| BDY58S | Silicon NPN Power Transistor |
| BDY71 | Silicon NPN Power Transistor |
