Datasheet Details
| Part number | BDY26 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.37 KB |
| Description | NPN Transistor |
| Datasheet | BDY26-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BDY26.
| Part number | BDY26 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.37 KB |
| Description | NPN Transistor |
| Datasheet | BDY26-INCHANGE.pdf |
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|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A IB Base Current 3 A PC Collector Power Dissipation@TC=25℃ 87.5 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDY26 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDY26 | NPN SILICON TRANSISTORS | Comset Semiconductor |
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BDY26A | HIGH CURRENT NPN SILICON TRANSISTOR | Seme LAB |
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BDY26B | HIGH CURRENT NPN SILICON TRANSISTOR | Seme LAB |
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BDY26C | Silicon NPN Power Transistor | Inchange Semiconductor |
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BDY26C | HIGH CURRENT NPN SILICON TRANSISTOR | Seme LAB |
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