| Part Number | BDY28 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust devic. SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.25A ICES Collector Cutof. |
BDY28 Datasheet
The BDY28 is a NPN Transistor.
| Part Number | BDY28 |
|---|---|
| Description | NPN SILICON TRANSISTORS |
| Manufacturer | Comset Semiconductor |
| Overview | BDY26 – 183T2 BDY27 – 184T2 BDY28 – 185T2 NPN SILICON TRANSISTORS, DIFFUSED MESA. They are NPN transistors mounted in Jedec TO-3. LF Large Signal Power Amplification. High Current Fast Switching. Comp. 8A, 185T2A BDY28B, 185T2B BDY28C, 185T2C BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26 BDY27 BDY28 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 Min 180 200 250 250 220 300 400 500 15 30 75 10 - Typ MAx Unit 55 65 90 20 45 82 0.3 1.5 0.6 V 1.0 mA 1.0 VCEO(BR) Colle. |