| Part number | BDY28 |
|---|---|
| Datasheet | BDY28-INCHANGE.pdf |
| File Size | 207.46 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF signal powe amplifier applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BDY28 | NPN SILICON TRANSISTORS | Comset Semiconductor |
 |
BDY28A | HIGH CURRENT NPN SILICON TRANSISTOR | Seme LAB |
|
BDY28B | HIGH CURRENT NPN SILICON TRANSISTOR | Seme LAB |
|
BDY28C | HIGH CURRENT NPN SILICON TRANSISTOR | Seme LAB |
See all Inchange Semiconductor datasheets
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| BDY25 | NPN Transistor |
| BDY26 | NPN Transistor |
| BDY27 | NPN Transistor |
| BDY29 | NPN Transistor |
| BDY37 | NPN Transistor |
| BDY38 | NPN Transistor |
| BDY39 | NPN Transistor |
| BDY42 | NPN Transistor |
| BDY43 | NPN Transistor |
| BDY44 | NPN Transistor |
