BF543 Datasheet and Specifications PDF

BF543 Silicon N-Channel MOSFET Triode
For high-frequency stages up to 300 MHz 3 preferably in FM applications
IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device.

in. V(BR)DS 20 7 2 - Values typ. 4 0.7 max. 12 50 6 1.5 Unit V Gate-source leakage current

VGS = 6 V, VDS = 0 nA mA V Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA AC characteristics Forward tranconductance VDS = 10 V, I D = 4 mA Gate input capacitanc.

Silicon N Channel MOS FET Triode Preliminary Data q q BF 543 For RF stages up to 300 MHz preferably in FM applications IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observ.

D = 10 µA,
* VGS = 4 V Gate-source breakdown voltage ± IGS = 10 mA, VDS = 0 ± Values typ. max. Unit V(BR)DS ±V(BR)GSS ± IGSS 20 7
* 2.0
*
*
*
* 4 0.7
* 12 50 6.0 1.5 V Gate cutoff current VGS = 6 V, VDS = 0 nA mA V Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V,.