Click to expand full text
Silicon N Channel MOS FET Triode
Preliminary Data
q q
BF 543
For RF stages up to 300 MHz preferably in FM applications IDSS = 4 mA, gfs = 12 mS
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BF 543 Marking LDs Ordering Code (tape and reel) Q62702-F1372 Pin Configuration 1 2 3 G D S Package1) SOT-23
Maximum Ratings Parameter Drain-source voltage Drain current Gate-source peak current Total power dissipation, TA ≤ 60 ˚C Storage temperature range Channel temperature Ambient temperature range Thermal Resistance Junction - ambient2) Rth JA
≤
Symbol VDS ID
± IGSM
Values 20 30 10 200 150 – 55 … + 150
Unit V mA mW
Ptot Tstg Tch TA
– 55 … + 150 ˚C
450
K/W
1) 2)
For detailed information see chapter Package Outlines.
BF543 Datasheet
