BF543 Datasheet | Siemens Semiconductor Group

Silicon N Channel MOS FET Triode Preliminary Data q q BF 543 For RF stages up to 300 MHz preferably in FM applications IDSS = 4 m A, gfs = 12 m S ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BF 543 Marking LDs Ordering Code (tape and reel) Q62702-F1372 Pin Configuration 1 2 3 G D S Package1) SOT-23 Maximum Ratings Parameter Drain-source voltage Drain current Gate-source peak current Total power dissipation, TA ≤ 60 ˚C Storage temperature range Channel temperature Ambient temperature range Thermal Resistance Junction - ambient2) Rth JA ≤ Symbol VDS ID ± IGSM Values 20 30 10 200 150 - 55 … + 150 Unit V m A m W Ptot Tstg Tch TA - 55 … + 150 ˚C K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group BF 543 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Drain-source breakdown voltage ID = 10 µA, - VGS = 4 V Gate-source breakdown voltage ± IGS = 10 m A, VDS = 0 ± Values typ. max. Unit V(BR)DS ±V(BR)GSS ± IGSS 20 7 - 2.0 - - - - 4 0.7 - 12 50 6.0 1.5 Gate cutoff current VGS = 6 V, VDS = 0 n A m A V Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA AC Characteristics Forward transconductance VDS = 10 V, ID = 4 m A, f = 1 k Hz Gate-1 input capacitance VDS = 10 V, ID = 4 m A, f = 1 MHz Reverse transfer capacitance VDS = 10 V, ID = 4 m A, f = 1 MHz Output capacitance VDS = 10 V, ID = 4 m A, f = 1 MHz Power gain (test circuit) VDS = 10 V, ID = 4 m A, f = 200 MHz GG = 2 m S, GL = 0.5 m S Noise figure (test circuit) VDS = 10 V, ID = 4 m A, f = 200 MHz GG = 2 m S, GL = 0.5 m S IDSS - VGS(p) gfs Cgss Cdg Cdss...