BF543 Overview
Silicon N Channel MOS FET Triode Preliminary Data q q BF 543 For RF stages up to 300 MHz preferably in FM applications IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
