BF545C
BF545C is N-channel silicon junction field-effect transistors manufactured by NXP Semiconductors.
description
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
- Low leakage level (typ. 500 f A)
- High gain
- Low cut-off voltage (max. 2.2 V for BF545A).
1.3 Applications
- Impedance converters in e.g. electret microphones and infra-red detectors
- VHF amplifiers in oscillators and mixers.
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS VGSoff drain-source voltage gate-source cut-off voltage
ID = 1 A; VDS = 15 V
IDSS drain current
VGS = 0 V; VDS = 15 V BF545A
BF545B
Ptot yfs total power dissipation forward transfer admittance
Tamb 25 C VGS = 0 V; VDS = 15 V
Min Typ -- 0.4
- Max Unit 30 V
- 7.8 V
2612 -3-
6.5 m A 15 m A 25 m A 250 m W 6.5 m S
NXP Semiconductors
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description source (s) drain (d) gate (g)
BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors)
Simplified outline Symbol
3 12 d gs sym054
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description...
