BF545B Description
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
BF545B Key Features
- Low leakage level (typ. 500 fA)
- High gain
- Low cut-off voltage (max. 2.2 V for BF545A)
BF545B Applications
- Impedance converters in e.g. electret microphones and infra-red detectors
- VHF amplifiers in oscillators and mixers