BF543 Datasheet | Infineon

Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz 3 preferably in FM applications IDSS = 4m A, g fs = 12m S 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF543 Maximum Ratings Parameter Drain-source voltage Drain current Marking LDs 1=G Pin Configuration 2=D 3=S Package SOT23 Symbol VDS ID Value 20 30 10 200 -55 ... 150 -55 ... 150 150 Unit V m A m W °C Gate-source peak current Total power dissipation, TS 76 °C Storage temperature Ambient temperature range Channel temperature IGSM Ptot Tstg TA Tch Thermal Resistance Channel - soldering point1) Rthchs 370 K/W 1For calculation of R th JA please refer to Application Note Thermal Resistance Jun-28-2001 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Drain-source breakdown voltage ID = 10 µA, - VGS = 4 V Gate-source breakdown voltage IGS = 10 m A, VDS = 0 V(BR)GSS IGSS Symbol min. V(BR)DS 20 7 2 - Values typ. 4 0.7 max. 12 50 6 1.5 Unit Gate-source leakage current VGS = 6 V, VDS = 0 n A m A V Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA AC characteristics Forward tranconductance VDS = 10 V, I D = 4 m A Gate input capacitance VDS = 10 V, I D = 4 m A, f = 1 MHz Reverse tranfer capacitance VDS = 10 V, I D = 4 m A, f = 1 MHz Output capacitance VDS = 10 V, I D = 4 m A, f = 1 MHz Power gain (test circuit) GG = 2m S, GL = 0,5 m S VDS = 10 V, I D = 4 m A, f = 200 MHz Noise figure (test circuit) GG = 2m S, GL = 0,5 m S VDS = 10 V, I D = 4 m A, f = 200 MHz IDSS - VGS (p) gfs Cgss Cdg Cdss Gp - 12 2.7 18 0.9...