BF599 Datasheet
BF599 Datasheet (Siemens Semiconductor Group)
Siemens Semiconductor Group
NPN Silicon RF Transistor q q BF 599 Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion Type BF 599 Marking NB Ordering Code (tape and reel) Q62702-F979 Pin Configur.
VCE = 10 V Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA Base-emitter voltage IC = 7 mA, VCE = 10 V AC Characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = 0 V,.
BF599 Datasheet (Diotec Semiconductor)
Diotec Semiconductor
BF 599 NPN High Frequency Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung Plastic case Kunststo.
20 V IE = 0, VCB = 20 V, Tj = 100/C IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 1 mA ICB0 ICB0 VCEsat hFE
*
*
* 38
Kennwerte (Tj = 25/C) Typ.
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* 150 mV 70 Max. 100 nA 10 :A
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*
Collector saturation volt.
* Kollektor-Sättigungsspg. 2) DC current gain
* Kollektor-Basis-Stromverhältnis 3)
1
) Mounted .
BF599 Datasheet (KEC)
KEC
SEMICONDUCTOR TECHNICAL DATA BFS20/BF599 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base .
r Voltage Transition Frequency Collector Output Capacitance BFS20 BF599 BFS20 BF599 BFS20 BF599 ICBO hFE VBE(ON) fT Cob TEST CONDITION IC=10ỌA, IE=0 IC=2mA, IB=0 IE=10ỌA, IC=0 VCB=20V, IE=0 VCB=20V, IE=0, Ta=150ᴱ VCB=40V, IE=0 VCE=10V, IC=7mA VCE=10V, IC=7mA VCE=10V, IC=7mA, f=100MHz VCB=10V, f=1.