BF599
BF599 is Surface mount Si-Epitaxial PlanarTransistors manufactured by Diotec Semiconductor.
BF 599 NPN
High Frequency Transistors Surface mount Si-Epitaxial Planar Transistors Si-Epitaxial Planar Transistoren für die Oberflächenmontage Power dissipation
- Verlustleistung Plastic case Kunststoffgehäuse Weight approx.
- Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert NPN
250 m W SOT-23 (TO-236) 0.01 g
Dimensions / Maße in mm 1=B 2=E 3=C
Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation
- Verlustleistung Collector current
- Kollektorstrom (dc) Base current
- Basisstrom (dc) Junction temperature
- Sperrschichttemperatur Storage temperature
- Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM Tj TS
Grenzwerte (TA = 25/C) BF 599 25 V 40 V 4V 250 m W 1) 25 m A 5 m A 150/C
- 65…+ 150/C
Characteristics (Tj = 25/C) Min. Collector-Base cutoff current
- Kollektorreststrom IE = 0, VCB = 20 V IE = 0, VCB = 20 V, Tj = 100/C IC = 10 m A, IB = 1 m A VCE = 10 V, IC = 1 m A ICB0 ICB0 VCEsat h FE
- -
- 38
Kennwerte (Tj = 25/C) Typ.
- - 150 m V 70 Max. 100 n A 10 :A
- -
Collector saturation volt.
- Kollektor-Sättigungsspg. 2) DC current gain
- Kollektor-Basis-Stromverhältnis 3)
) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2%
- Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 3 ) Tested with pulses tp = 300 :s, duty cycle # 2%
- Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 4 01.11.2003
High Frequency Transistors Characteristics (Tj = 25/C) Min. Base-Emitter voltage
- Basis-Emitter-Spannung 1) VCE = 10 V, IC = 7 m A Gain-Bandwidth...
