BF591 Datasheet | NXP Semiconductors

FEATURES - Low current (max. 150 m A) - High voltage (max. 210 V). APPLICATIONS - Telephone systems. DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic package. 3 handbook, halfpage BF591; BF593 PINNING PIN 1 2 3 emitter collector, connected to mounting base base DESCRIPTION 1 2 3 MAM305 Fig.1 Simplified outline (TO-202; SOT128B) and symbol. QUICK REFERENCE DATA SYMBOL VCBO BF591 BF593 VCEO collector-emitter voltage BF591 BF593 ICM Ptot h FE peak collector current total power dissipation DC current gain Tamb ≤ 55 °C IC = 20 m A; VCE = 5 V IC = 100 m A; VCE = 6 V open base - - - - 30 30 170 210 300 1.3 - - V V m A W PARAMETER collector-base voltage CONDITIONS open emitter - - 210 250 V V MIN. MAX. UNIT 1997 Jul 02 Philips Semiconductors Product specification NPN high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF591 BF593 VCEO collector-emitter voltage BF591 BF593 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 55 °C open collector open base - - - - - - - - 65 - - 65 PARAMETER collector-base voltage CONDITIONS open emitter - - MIN. BF591; BF593 MAX. 210 250 170 210 5 150 300 100 1.3 +150 150 +150 V V V V V UNIT m A m A m A W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE 73 UNIT K/W thermal resistance from junction to ambient in free air CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 140 °C IC = 0; VEB = 5 V note 1 IC = 20 m A; VCE = 5 V IC = 100 m A; VCE = 6 V IC = 150 m A; VCE = 7 V Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01. 30 30 20 - - - - - - MIN. 1 100 MAX. 50 UNIT n A µA n A 1997 Jul...