BF599 Datasheet | Siemens Semiconductor Group

NPN Silicon RF Transistor q q BF 599 mon emitter IF/RF amplifier Low feedback capacitance due to shield diffusion Type BF 599 Marking NB Ordering Code (tape and reel) Q62702-F979 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TA ≤ 25 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA ≤ Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg Values 25 40 4 25 5 280 150 - 65 … + 150 Unit V m A m W ˚C K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group BF 599 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector cutoff current VCB = 20 V, IE = 0 DC current gain IC = 7 m A, VCE = 10 V Collector-emitter saturation voltage IC = 10 m A, IB = 1 m A Base-emitter voltage IC = 7 m A, VCE = 10 V AC Characteristics Transition frequency IC = 5 m A, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Optimum power gain IC = 7 m A, VCE = 10 V, f = 35 MHz Forward transfer admittance IC = 7 m A, VCE = 10 V, f = 35 MHz f T Ccb Cce Gpe opt I y21e I - - - - - 550 0.35 0.68 43 175 - - - - - d B m S MHz p F V(BR) CE0 ICB0 h FE VCE sat VBE 25 - 38 - - - - 70 0.15 0.78 -...