BFN16 Datasheet and Specifications PDF
The BFN16 is a NPN Silicon High-Voltage Transistors.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
BFN16 Datasheet
BFN16 Datasheet (Infineon)
Infineon
BFN16, BFN18 NPN Silicon High-Voltage Transistors Suitable for video output stages in TV sets and 1 2 3 switching power supplies High breakdown voltage Low collector-emitter saturation voltage.
ol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE = .
BFN16 Datasheet (Siemens Semiconductor Group)
Siemens Semiconductor Group
NPN Silicon High-Voltage Transistors BFN 16 BFN 18 Suitable for video output stages in TV sets and switching power supplies q High breakdown voltage q Low collector-emitter saturation voltage q Comp.
Semiconductor Group 1 5.91 BFN 16 BFN 18 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA BFN 16 BFN 18 Collector-base breakdown voltage IC = 100 µA BFN 16 BFN 18 Emitter-base breakdown vo.
BFN16 Datasheet (Zetex Semiconductors)
Zetex Semiconductors
SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - OCTOBER 1995 7 BFN16 C COMPLEMENTARY TYPE PARTMARKING DETAILS - BFN17 DD E C B SYMBOL VCBO V CEO V EBO I CM IC IB P .
100 0.4 0.9 MAX. UNIT V V V nA µA nA V V CONDITIONS. I C=100 µ A I C=1mA I E=100 µ A V CB=250V V CB=250V, T amb=150 °C V EB=3V I C=20mA, I B=2mA I C =20mA, I B=2mA I C=1mA,V CE=10V* I C=10mA, V CE=10V I C=30mA, V CE=10V I C=20mA, V CE=10V* f=20MHz V CB=30V,f=1MHz fT C obo * Measured under pulsed .