BFN16 Datasheet | Zetex Semiconductors

.. SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - OCTOBER 1995 7 PLEMENTARY TYPE PARTMARKING DETAILS - BFN17 DD SYMBOL VCBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE 250 250 5 500 200 100 1 -65 to +150 UNIT V V V m A m A m A W °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(sat) h FE 25 40 40 Typ.70 Typ.1.5 MHz p F MIN. 250 250 5 100 20 100 0.4 0.9 MAX. UNIT V V V n A µA n A V V CONDITIONS. I C=100 µ A I C=1m A I E=100 µ A V CB=250V V CB=250V, T amb=150 °C V EB=3V I C=20m A, I B=2m A I C =20m A, I B=2m A I C=1m A,V CE=10V- I C=10m A, V CE=10V I C=30m A, V CE=10V I C=20m A, V CE=10V- f=20MHz V CB=30V,f=1MHz f T C obo - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMTA42 datasheet -...