BFN18 Datasheet | Zetex Semiconductors

.. SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - JANUARY 1996 7 PLEMENTARY TYPE - BFN19 PARTMARKING DETAIL - DE ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE 300 300 5 500 200 100 1 -65 to +150 UNIT V V V m A m A m A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(sat) h FE 25 40 30 Typ. 70 Typ. 1.5 MHz p F MIN. 300 300 5 100 20 100 0.5 0.9 MAX. V V V n A µA n A V V UNIT CONDITIONS. I C=100 µ A I C=1m A- I E=100 µ A V CB=250V V CB=250V, T amb=150°C V EB=3V I C=20m A, I B=2m A I C=20m A, I B=2m A I C=1m A, V CE=10V- I C=10m A, V CE=10V- I C=30m A, V CE=10V- I C=20m A, V CE=10V f=20MHz V CB=30V,f=1MHz f T C obo - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMTA42 datasheet. -...