BFN19
BFN19 is PNP Silicon High-Voltage Transistors manufactured by Infineon.
PNP Silicon High-Voltage Transistors
- Suitable for video output stages in TV sets and switching power supplies
- High breakdown voltage
- Low collector-emitter saturation voltage
- plementary types: BFN18 (NPN)
- Pb-free (Ro HS pliant) package
- Qualified according AEC Q101
1 2 3
Type BFN19
Marking DH
Pin Configuration 1=B 2=C 3=E
Package SOT89
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipation TS ≤ 130 °C Junction temperature Storage temperature
VCEO VCBO VEBO IC ICM IB IBM Ptot
Tj Tstg
300 300 5 200 500 100 200 1
150 -65 ... 150
Thermal Resistance Parameter Junction
- soldering point1)
Symbol Rth JS
Value ≤ 20
1For calculation of Rth JA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit V m A
W °C
Unit K/W
1 2011-09-30
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 300
- -
IC = 1 m A, IB =...
