BFN17
BFN17 is PNP Silicon High-Voltage Transistors manufactured by Infineon.
BFN17, BFN19
PNP Silicon High-Voltage Transistors
Suitable for video output stages in TV sets and
1 2 3 switching power supplies
High breakdown voltage Low collector-emitter saturation voltage plementary types: BFN16, BFN18 (NPN)
VPS05162
Type BFN17 BFN19
Maximum Ratings Parameter
Marking DG DH 1=B 1=B
Pin Configuration 2=C 2=C 3=E 3=E
Package SOT89 SOT89
Symbol VCEO VCBO VEBO
BFN17 250 250 5
BFN19 300 300 5
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
200 500 100 200 1 150 -65 ... 150 m A
W °C
Thermal Resistance Junction
- soldering point1) Rth JS
20
K/W
1For calculation of R th JA please refer to Application Note Thermal Resistance
Nov-30-2001
BFN17, BFN19
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C VCB = 250 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 1 m A, VCE = 10 V IC = 10 m A, VCE = 10 V IC = 30 m A, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 m A, IB = 2 m A Base-emitter saturation voltage 1) IC = 20 m A, IB = 2 m A BFN17 BFN19 VBEsat BFN17 BFN19 VCEsat 0.4 0.5 0.9 h FE 25 40 40 30 BFN17 BFN19 IEBO BFN17 BFN19 ICBO 20 20 100 ICBO 100 100 BFN17 BFN19 V(BR)EBO BFN17 BFN19 V(BR)CBO 250 300 5 V(BR)CEO 250 300 typ. max.
Unit
V n A
µA n A
- V
1) Pulse test: t < 300s; D < 2%
Nov-30-2001
BFN17, BFN19
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC...
