BFN16 Datasheet | Infineon

BFN16, BFN18 NPN Silicon High-Voltage Transistors Suitable for video output stages in TV sets and 1 2 3 switching power supplies High breakdown voltage Low collector-emitter saturation voltage plementary types: BFN17, BFN19 (PNP) VPS05162 Type BFN16 BFN18 Maximum Ratings Parameter Marking DD DE 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E Package SOT89 SOT89 Symbol VCEO VCBO VEBO BFN16 250 250 5 BFN18 300 300 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 200 500 100 200 1 150 -65 ... 150 m A W °C Thermal Resistance Junction - soldering point1) Rth JS 20 K/W 1For calculation of R th JA please refer to Application Note Thermal Resistance Nov-30-2001 BFN16, BFN18 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C VCB = 250 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 1 m A, VCE = 10 V IC = 10 m A, VCE = 10 V IC = 30 m A, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 m A, IB = 2 m A Base-emitter saturation voltage 1) IC = 20 m A, IB = 2 m A h FE ICBO V(BR)CEO typ. max. Unit V 250 300 n A 100 100 µA 20 20 100 n A 25 40 V 0.4 0.5 0.9 BFN16 BFN18 V(BR)CBO BFN16 BFN18 V(BR)EBO 250 300 5 BFN16 BFN18 ICBO BFN16...