BFN18 Datasheet and Specifications PDF

The BFN18 is a NPN Silicon High-Voltage Transistors.

Key Specifications

PackageSOT
Mount TypeSurface Mount
Pins3
Max Frequency70 MHz
Height1.5 mm
Length4.5 mm
Width2.5 mm
Max Operating Temp150 °C
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Part NumberBFN18 Datasheet
ManufacturerInfineon
Overview BFN16, BFN18 NPN Silicon High-Voltage Transistors  Suitable for video output stages in TV sets and 1 2 3 switching power supplies  High breakdown voltage  Low collector-emitter saturation voltage. ol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE = .
Part NumberBFN18 Datasheet
DescriptionSOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ManufacturerZetex Semiconductors
Overview SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - JANUARY 1996 7 COMPLEMENTARY TYPE - BFN19 PARTMARKING DETAIL - DE BFN18 C E C ABSOLUTE MAXIMUM RATINGS. PARAMETER Col. 20 100 0.5 0.9 MAX. V V V nA µA nA V V UNIT CONDITIONS. I C=100 µ A I C=1mA* I E=100 µ A V CB=250V V CB=250V, T amb=150°C V EB=3V I C=20mA, I B=2mA I C=20mA, I B=2mA I C=1mA, V CE=10V* I C=10mA, V CE=10V* I C=30mA, V CE=10V* I C=20mA, V CE=10V f=20MHz V CB=30V,f=1MHz fT C obo *Measured under pulse.
Part NumberBFN18 Datasheet
DescriptionNPN Silicon High-Voltage Transistors
ManufacturerSiemens Semiconductor Group
Overview NPN Silicon High-Voltage Transistors BFN 16 BFN 18 Suitable for video output stages in TV sets and switching power supplies q High breakdown voltage q Low collector-emitter saturation voltage q Comp. Semiconductor Group 1 5.91 BFN 16 BFN 18 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA BFN 16 BFN 18 Collector-base breakdown voltage IC = 100 µA BFN 16 BFN 18 Emitter-base breakdown vo.

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