BFN18 Datasheet | Siemens Semiconductor Group

NPN Silicon High-Voltage Transistors BFN 16 BFN 18 Suitable for video output stages in TV sets and switching power supplies q High breakdown voltage q Low collector-emitter saturation voltage q plementary types: BFN 17, BFN 19 (PNP) q Type BFN 16 BFN 18 Marking DD DE Ordering Code (tape and reel) Q62702-F885 Q62702-F1056 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BFN 16 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 250 250 Values BFN 18 300 300 5 200 500 100 200 1 150 Unit V m A W ˚C - 65 … + 150 75 20 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group BFN 16 BFN 18 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 m A BFN 16 BFN 18 Collector-base breakdown voltage IC = 100 µA BFN 16 BFN 18 Emitter-base breakdown voltage IE = 100 µA Collector-base cutoff current VCB = 200 V VCB = 250 V VCB = 200 V, TA = 150 ˚C VCB = 250 V, TA = 150 ˚C Emitter-base cutoff current VEB = 3 V DC current gain IC = 1 m A, VCE = 10 V IC = 10 m A, VCE = 10 V1) IC = 30 m A, VCE = 10 V1) BFN 16 BFN 18 BFN 16 BFN 18 IEB0 h FE 25 40 40 30 VCEsat - - VBEsat - - - - 0.4 0.5 0.9 - - - - - - - - V V(BR)CE0 250 300 V(BR)CB0 250 300 V(BR)EB0 ICB0 - - - - - - - - - - 100 100 20 20 100 n A n A µA µA n A - 5 - -...