The BFP136W is a NPN Silicon RF Transistor.
| Max Operating Temp | 150 °C |
|---|
| Part Number | BFP136W Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview | BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handlin. ollector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 50 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC cur. |
| Part Number | BFP136W Datasheet |
|---|---|
| Description | NPN Silicon RF Transistor |
| Manufacturer | Infineon |
| Overview | BFP136W NPN Silicon RF Transistor For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 80 mA, VCE = 5 V hFE 50 100 200 IEBO 1 µA ICBO . |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Win Source | 39000 | 11+ : 5.4135 USD 27+ : 4.4421 USD 41+ : 4.3035 USD 56+ : 4.1638 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BFP136 | Infineon | NPN Silicon RF Transistor |
| BFP136 | Siemens Semiconductor Group | NPN Silicon RF Transistor |