BFP180W Datasheet and Specifications PDF

The BFP180W is a NPN Silicon RF Transistor.

Part NumberBFP180W Datasheet
ManufacturerInfineon
Overview BFP 180W NPN Silicon RF Transistor  For low-power amplifier in mobile 3 4 communication systems (pager) at collector currents from 0.2 mA to 2.5 mA f T = 7 GHz  F = 2.1 dB at 900 MHz 2 1 VPS05605. llector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 mA, VCE = 5 V hFE 30 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 8 V Sy.
Part NumberBFP180W Datasheet
DescriptionNPN Silicon RF Transistor
ManufacturerSiemens Semiconductor Group
Overview BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2.1dB at 900MHz ESD: Electrostatic disch. ter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 8 100 - V µA 100 nA 100 µA 1 30 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutof.

Price & Availability

Seller Inventory Price Breaks Buy
No distributor offers were returned for this part.