BFP180 Datasheet | Siemens Semiconductor Group

BFP 180 NPN Silicon RF Transistor - For low-power amplifiers in mobile munication systems (pager) at collector currents from 0.2 to 2.5m A f T = 7GHz - F = 2.1d B at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 180 RDs Q62702-F1377 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 8 10 10 2 4 0.5 m W 30 150 - 65 ... + 150 - 65 ... + 150 ≤ 875 °C m A Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 124 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point Rth JS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group Nov-22-1996 BFP 180 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 8 100 - V µA 100 n A 100 µA 1 30 200 IC = 1 m A, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO h FE VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE =...