BFP180W Datasheet | Infineon

BFP 180W NPN Silicon RF Transistor For low-power amplifier in mobile 3 4 munication systems (pager) at collector currents from 0.2 m A to 2.5 m A f T = 7 GHz F = 2.1 d B at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 180W Maximum Ratings Parameter Marking RDs 1=E Pin Configuration 2=C 3=E 4=B Package SOT-343 Unit V Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 8 10 10 2 4 0.5 30 150 -65 ... 150 -65 ... 150 Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS 126°C 1) Junction temperature Ambient temperature Storage temperature m A m W °C Thermal Resistance Junction - soldering point Rth JS 785 K/W 1T is measured on the collector lead at the soldering point to the pcb S Oct-12-1999 BFP 180W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 m A, VCE = 5 V h FE 30 100 200 IEBO 1 µA ICBO 100 n A ICES 100 µA V(BR)CEO 8 V Symbol min. Values typ. max. Unit Oct-12-1999 BFP 180W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 3 m A, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 1 m A, VCE = 5 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable F) IC = 1 m A, VCE = 5 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain f = 900 MHz f = 1.8 GHz IC = 1 m A, VCE = 5 V, ZS = ZL = 50 , |S21e|2 9 7 15 11.5 Gms 2.1 2.25 F Ceb...