BFP183W
BFP183W is Low Noise Silicon Bipolar RF Transistor manufactured by Infineon.
Low Noise Silicon Bipolar RF Transistor
- For low noise, high-gain broadband amplifiers at collector currents from 2 m A to 30 m A
- f T = 8 GHz, NFmin = 0.9 d B at 900 MHz
- Pb-free (Ro HS pliant) and halogen-free package with visible leads
- Qualification report according to AEC-Q101 available
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP183W
Marking
Pin Configuration
RHs 1=E 2=C 3=E 4=B
- -
Package SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 58 °C Junction temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TStg
Value 12 20 20 2 65 5 450
150 -55 ... 150
Unit V m A m W °C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction
- soldering point2)
Rth...
