BFP183 - Low Noise Silicon Bipolar RF Transistor

Infineon Technologies AG

Datasheet Details

Part number	BFP183
Manufacturer	Infineon Technologies AG
File Size	536.08 KB
Description	Low Noise Silicon Bipolar RF Transistor
Datasheet	BFP183 Datasheet

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Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available 3 4 BFP183 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP183 Marking Pin Configuration RHs 1=C 2=E 3=B 4=E - - Package SOT143 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 76 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg Value 12 20 20 2 65 5 250 150 -55 ...