BFP181R
BFP181R is NPN Silicon RF Transistor manufactured by Infineon.
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 m A to 12 m A
f T = 8 GHz
F = 1.45 d B at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP181R
Maximum Ratings Parameter
Marking RFs 1=E
Pin Configuration 2=C 3=E 4=B
Package SOT143R
Unit V
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 12 20 20 2 20 2 175 150 -65 ... 150 -65 ... 150
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 75 °C 1) Junction temperature Ambient temperature Storage temperature m A m W °C
Thermal Resistance Junction
- soldering point 2) Rth JS
430
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance th JA
Jun-21-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 m A, VCE = 8 V h FE 50 100 200 IEBO 1 µA ICBO 100 n A ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
Jun-21-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 10 m A, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 m A, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 5 m A, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain f = 900 MHz f = 1.8 GHz IC = 5 m A, VCE = 8 V, ZS = ZL =...
