BFP181R Overview
BFP181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Unit 2 Jun-21-2001 BFP181R at TA = 25°C, unless otherwise specified.
