BFP181
BFP181 is NPN Silicon RF Transistor manufactured by Siemens Semiconductor Group.
BFP 181
NPN Silicon RF Transistor
- For low noise, high-gain broadband amplifiers at collector currents from 0.5m A to 12m A
- f T = 8GHz
F = 1.45d B at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 181 RFs Q62702-F1271 1=C 2=E 3=B 4=E
Package SOT-143
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 20 2 m W 175 150
- 65 ... + 150
- 65 ... + 150 ≤ 430 °C m A Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 75 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction
- soldering point
Rth JS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
Dec-11-1996
BFP 181
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100
- V µA 100 n A 100 µA 1 50 200
IC = 1 m A, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO h FE
VCE = 20 V, VBE = 0
Collector-base cutoff...
