BFP181 Datasheet and Specifications PDF

The BFP181 is a NPN Silicon RF Transistor.

Key Specifications

PackageSOT
Mount TypeSurface Mount
Pins4
Max Operating Temp150 °C
Min Operating Temp-65 °C
Part NumberBFP181 Datasheet
ManufacturerSiemens Semiconductor Group
Overview BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive dev. haracteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1.
Part NumberBFP181 Datasheet
DescriptionLow Noise Silicon Bipolar RF Transistor
ManufacturerInfineon
Overview Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) pa. 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) K/W 1 2013-10-15 BFP181 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown volt.

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