BFP181
BFP181 is Low Noise Silicon Bipolar RF Transistor manufactured by Infineon.
Low Noise Silicon Bipolar RF Transistor
- For low noise, high-gain broadband amplifiers at collector currents from 0.5 m A to 12 m A
- f T = 8 GHz, NFmin = 0.9 d B at 900 MHz
- Pb-free (Ro HS pliant) package
- Qualification report according to AEC-Q101 available
3 4
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP181
Marking
Pin Configuration
RFs 1 = C 2 = E 3 = B 4 = E
- -
Package SOT143
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 75 °C Junction temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TStg
12 20 20 2 20 2 175
150 -55 ... 150
V m A m W °C
Thermal Resistance
Parameter
Symbol
Value
Unit...
