The BFP181R is a NPN Silicon RF Transistor.
| Max Operating Temp | 150 °C |
|---|
| Part Number | BFP181R Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview | BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive de. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB. |
| Part Number | BFP181R Datasheet |
|---|---|
| Description | NPN Silicon RF Transistor |
| Manufacturer | Infineon |
| Overview | BFP181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensiti. pecified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200 IEBO 1 . |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BFP181 | Siemens Semiconductor Group | NPN Silicon RF Transistor |
| BFP181TRW | Vishay | Silicon NPN Planar RF Transistor |
| BFP181T | Vishay | Silicon NPN Planar RF Transistor |
| BFP181TW | Vishay | Silicon NPN Planar RF Transistor |
| BFP181 | Infineon | Low Noise Silicon Bipolar RF Transistor |
| BFP181W | Infineon | NPN Silicon RF Transistor |
| BFP181W | Siemens Semiconductor Group | NPN Silicon RF Transistor |