BFP183 Datasheet and Specifications PDF

The BFP183 is a NPN Silicon RF Transistor.

Key Specifications

PackageSOT
Mount TypeSurface Mount
Pins4
Height1.1 mm
Max Operating Temp150 °C
Min Operating Temp-65 °C
Part NumberBFP183 Datasheet
ManufacturerSiemens Semiconductor Group
Overview BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive de. Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = .
Part NumberBFP183 Datasheet
DescriptionLow Noise Silicon Bipolar RF Transistor
ManufacturerInfineon
Overview Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) pack. .

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